70S1K4P7

CoolMOS™ P7 is a family of high-voltage power MOSFETs from Infineon Technologies, based on the Superjunction (SJ) principle.

The CoolMOS™ P7 platform is optimized for cost-sensitive consumer applications such as chargers, adapters, lighting and TVs.

The technology combines the benefits of a fast-switching Superjunction MOSFET with low switching losses, excellent thermal behavior and high power density.

Key Performance Parameters

Features

• Extremely low losses due to very low:
  • RDS(on) × Qg;
  • RDS(on) × Eoss.
• Excellent thermal behavior.
• Integrated ESD protection diode.
• Low switching losses.
• Low Eoss.
• Product validation according to JEDEC standards.

Benefits

• Cost-competitive technology.
• Lower operating temperature.
• High ESD ruggedness.
• Improved efficiency at higher switching frequencies.
• High power density.
• Small form factors.

Potential Applications

Recommended for Flyback topologies, for example:

• chargers;
• adapters;
• lighting applications;
• consumer SMPS;
• other compact high-frequency power supplies.

Parallel MOSFET Operation

For MOSFET paralleling, the manufacturer generally recommends the use of ferrite beads on the gates or separate totem-pole gate drivers.

Practical Repair Notes

When replacing a failed MOSFET in a Flyback converter, check the complete primary switching stage rather than replacing the transistor alone.

Particular attention should be paid to:

• PWM controller;
• gate resistor and gate-drive circuit;
• RCD/snubber clamp;
• primary transformer winding;
• rectifier and bulk capacitor;
• secondary rectifier;
• output capacitors;
• feedback circuit.

Important: the 700 V VDS rating is a maximum device rating, not a target operating voltage. In a mains Flyback converter, turn-off voltage spikes on the drain can be substantial, so the snubber/clamp circuit is critical.

Tags: 70S1K4P7, IPD70R1K4P7S, CoolMOS, P7, MOSFET, N-Channel, 700V, 1.4Ω, 8.2A, TO-252, DPAK, Infineon