MMF60R190Q

The MMF60R190Q is a power N-channel MOSFET from Magnachip, utilizing advanced Super Junction technology.

The optimized charge-coupling technology provides a combination of very low on-resistance and low gate charge. This reduces conduction and switching losses and improves the overall efficiency of power conversion systems.

The device also provides low EMI characteristics and reduced switching losses, making it suitable for high-frequency power applications.

Features

• Low power loss due to:
  • high-speed switching;
  • low on-resistance.
• Advanced Super Junction technology.
• Optimized charge-coupling technology.
• Low gate charge.
• Low switching loss.
• Low EMI.
• 100% avalanche tested.
• Green package:
  • Pb-free plating;
  • halogen-free.

Applications

• PFC power supply stages;
• switching applications;
• adapters;
• motor control;
• DC–DC converters.

Practical Repair Notes

When troubleshooting an MMF60R190Q-based power stage, check:

• drain-to-source short circuit;
• gate-to-source leakage or breakdown;
• gate resistor;
• MOSFET gate driver;
• PFC/PWM controller;
• snubber or RCD clamp;
• primary-side power components;
• secondary-side short circuits and overload conditions.

The 100% avalanche-tested specification does not eliminate the need for proper VDS spike suppression. Excessive drain-voltage spikes during turn-off can still damage the MOSFET.

Note: The supplied fragment does not contain the actual Key Parameters table. Therefore, exact ratings such as VDS, ID, RDS(on), Qg, VGS and package type should be taken from the complete MMF60R190Q datasheet rather than inferred from the part number.

Tags: MMF60R190Q, MMF60R190QTH, 60R190Q, MOSFET, N-Channel, 600V, 20A, 0.19Ω, Super Junction, TO-220F, MagnaChip