FQPF12N80C

12N80 is an N-channel enhancement-mode power MOSFET rated for a maximum drain-to-source voltage of 800 V and a drain current of up to 12 A.

The device is manufactured using UTC's advanced Planar Stripe and DMOS technology, providing low on-state resistance and superior switching performance.

The device is designed to achieve low RDS(ON) together with high switching speed.

The UTC 12N80 can also withstand high-energy pulses under avalanche and commutation conditions.

The device is intended for use in high-efficiency switch-mode power supplies (SMPS).

Key Features

• RDS(ON) < 1.0 Ω at VGS = 10 V.
• High switching speed.
• Improved dv/dt capability.
• High-energy avalanche capability.
• 100% avalanche tested.
• 800 V high-voltage rating.
• Suitable for high-efficiency switch-mode power supplies.
• Planar Stripe and DMOS technology.

Technical Characteristics

Applications

• Offline Flyback converters.
• AC/DC power supplies.
• Switch-mode power supplies.
• Power adapters.
• High-voltage switching power circuits.

Practical Note

The 800 V VDS rating is the maximum drain-to-source voltage rating; it does not mean that an 800 V operating voltage should be applied continuously.

In Flyback converters, the MOSFET drain can experience substantial voltage spikes during turn-off. Proper snubber/clamp circuitry is therefore important to keep the actual drain voltage within the device's safe operating limits.

The specified RDS(ON) < 1.0 Ω applies at VGS = 10 V. When selecting a replacement MOSFET, the actual gate-drive voltage must therefore be taken into account.

Tags: FQPF12N80C, 12N80C, 12N80, MOSFET, N-Channel, 800V, 12A, TO-220F, Fairchild, ON Semiconductor