Key Ratings
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VDSS: 100 V
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RDS(on):
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Typical: 3.7 mΩ
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Maximum: 4.5 mΩ
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ID (Silicon limited): 180 A
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ID (Package limited): 120 A
Applications
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High-efficiency synchronous rectification in SMPS
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Uninterruptible Power Supplies (UPS)
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High-speed power switching
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Hard-switched and high-frequency circuits
Benefits
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Improved gate robustness, avalanche capability, and dynamic dv/dt ruggedness
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Fully characterized capacitance parameters and avalanche Safe Operating Area (SOA)
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Enhanced body diode dV/dt and dI/dt performance
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Lead-free construction
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RoHS compliant and halogen-free
Tags: IRFB4110PBF, power MOSFET, N-channel, 100V 180A, TO-220AB, inverter transistor, power electronics

