NCE3050K

The NCE3050K is a high-performance N-channel power MOSFET built with advanced trench technology. This structure provides exceptionally low R_DS(on) together with low gate charge, making the device well suited for a wide variety of power-switching applications.

Key Features

• Drain-source voltage: V_DS = 30 V

• Continuous drain current: I_D = 50 A

• On-resistance:
  • < 11 mΩ @ V_GS = 10 V
  • < 16 mΩ @ V_GS = 5 V

• High-density cell design for ultra-low R_DS(on)

• Fully characterized avalanche voltage and current

• Excellent stability and parameter uniformity at high avalanche energy E_AS

• Package optimized for high thermal dissipation

• Special process providing enhanced ESD robustness

Applications

• Power switching circuits

• Hard-switched and high-frequency power converters

• Uninterruptible power supplies (UPS)

Tags: NCE3050K, MOSFET, power transistor, N-channel, 60V, TO-252, inverter transistor, power supply transistor