AONR21321
- Product Code: AONR21321
- Availability: 2
15.0
This is a P-Channel MOSFET rated at -30V with high-current capability up to -24A at V<sub>GS</sub> = -10V. Built using advanced trench technology, the device offers low R<sub>DS(ON)</sub>, fast switching, and high energy tolerance, making it ideal for portable and battery-operated applications.
Product Summary
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Drain-Source Voltage (V<sub>DS</sub>): -30 V
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Continuous Drain Current (I<sub>D</sub>): -24 A @ V<sub>GS</sub> = -10 V
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R<sub>DS(ON)</sub>:
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< 16.5 mΩ @ V<sub>GS</sub> = -10 V
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< 29.5 mΩ @ V<sub>GS</sub> = -4.5 V
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Gate-Source Voltage (V<sub>GS</sub>): ±25 V
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Avalanche Energy: 31 mJ (L = 0.1 mH)
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Junction Temperature: up to 150°C
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Storage Temp: -55°C to +150°C
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Package: DFN 3x3 EP
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Form: Tape & Reel (MOQ: 5000)
Thermal Characteristics
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R<sub>θJC</sub> (Junction-to-Case): 4.2 °C/W
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R<sub>θJA</sub> (Junction-to-Ambient): 47 °C/W
Applications
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Notebook AC-in load switching
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Battery charge/discharge protection
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Switching converters
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Power modules
Tags: AONR21321, DFN 3x3_EP, P-MOSFET, −30V, 24A, low Rds(on), power transistor