Description
uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 30V ID =6 A
RDS(ON) < 28mΩ @ VGS=10V
VDS = -30V ID =-7.6 A
RDS(ON) < 32mΩ @ VGS=10V
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol Parameter
Rating
UnitsN-Ch P-Ch
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage ±20 ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 6 -7.6 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 4.5 -5.9 A
IDM Pulsed Drain Current2 20 -15 A
EAS Single Pulse Avalanche Energy3 22 45 mJ
IAS Avalanche Current 21 -30 A
PD@TC=25℃ Total Power Dissipation4 2.0 2.0 W
TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃
RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W
RθJC Thermal Resistance Junction-Case1 --- 5 ℃/W
The AO4406
RDS(ON) < 42mΩ @ VGS=4.5 V
RDS(ON) < 40mΩ @ VGS=4.5V