The 2SD882 is NPN silicon transistor suited for the output stage of 3
watts audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES
• Low saturation voltage
VCE(sat) = 0.5 V MAX. (IC = −2 A, I B = 0.2 A)
• Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, I C = 1 A)
• Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature −55 to +150°C
Junction Temperature 150°C Maximum
Maximum Power Dissipations
Total Power Dissipation (T A = 25°C) 1.0 W
Total Power Dissipation (T C = 25°C) 10 W
Maximum Voltages and Currents (TA = 25°C)
VCBO Collector to Base Voltage 40 V
VCEO Collector to Emitter Voltage 30 V
VEBO Emitter to Base Voltage 5.0 V
I C(DC) Collector Current (DC) 3.0 A
I C(pulse)Note Collector Current (pulse) 7.0 A
Note Pulse Test PW ≤ 350
μs, Duty Cycle ≤ 2%

БУ