NCE65T260I/K — N-Channel Super Junction Power MOSFET for high-voltage AC-DC power systems.
General Description:
This device series utilizes advanced trench gate and super junction technology to achieve low R<sub>DS(on)</sub> and low gate charge. These MOSFETs are designed to meet modern AC-DC SMPS, PFC, and industrial power conversion needs.
Features:
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New-generation technology for high-voltage applications
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Low on-resistance and conduction losses
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Compact package
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Ultra-low gate charge — easier to drive
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100% avalanche tested for robustness
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RoHS compliant (lead-free)
Applications:
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Power Factor Correction (PFC) circuits
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Switched-Mode Power Supplies (SMPS)
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Uninterruptible Power Supplies (UPS)
Key Specifications:
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDS | 650 | V |
On-State Resistance (typ) | RDS(on) | 220 | mΩ |
Continuous Drain Current | ID | 15 | A |
Tags: NCE65T260K, power MOSFET, TO-252, 650V, 52A, high voltage, fast switching