AO4606
- Product Code: AO4606
- Availability: 10
10.0
AO4606
Complementary Enhancement Mode Field Effect Transistor
(N-Channel and P-Channel MOSFET Pair)
Release Date: February 2003
Features:
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N-Channel:
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Drain-Source Voltage (V<sub>DS</sub>): 30 V
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Continuous Drain Current (I<sub>D</sub>): 6.9 A
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On-Resistance (R<sub>DS(ON)</sub>):
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< 28 mΩ @ V<sub>GS</sub> = 10 V
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< 42 mΩ @ V<sub>GS</sub> = 4.5 V
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P-Channel:
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Drain-Source Voltage (V<sub>DS</sub>): –30 V
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Continuous Drain Current (I<sub>D</sub>): –6 A
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On-Resistance (R<sub>DS(ON)</sub>):
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< 35 mΩ @ V<sub>GS</sub> = –10 V
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< 58 mΩ @ V<sub>GS</sub> = –4.5 V
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General Description:
The AO4606 integrates advanced trench technology MOSFETs offering low R<sub>DS(ON)</sub> and low gate charge. The complementary N- and P-channel MOSFET pair is ideal for use in high-side switching circuits with level shifting and other general-purpose applications.
Tags: AO4606, dual N-MOSFET, SO-8, 6A, 30V, low RDS(ON), power management