Transistors

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N-Channel 650V (Drain-to-Source) Power MOSFET FEATURES Low figure-of-merit (FOM): R<s..

20.0

NPN Silicon Epitaxial Planar Transistor For switching and AF (audio frequency) amplifier applicatio..

1.0

Maximum Ratings Rating Symbol Value Unit Collector ..

1.0

N-Channel 60V MOSFETs – 2N7000 / 2N7002 / VQ1000J/P / BS170 Series General Description: These en..

3.0

A1015 TRANSISTOR (PNP) FEATURES: High voltage and high current capability Excell..

1.0

FEATURES Collector-Emitter Voltage: BV<sub>CEO</sub> = 50 V Collector C..

2.0

2SK3797 — N-Channel MOSFET (π-MOSVI Technology) by Toshiba Applications: Ideal for switching reg..

10.0

GT30F124 — IGBT Application: High-speed transistor for power management and energy conversion. ..

43.0

GT30F131 — N-Channel IGBT Transistor Application: Ideal for high-power switching, converters, inv..

35.0

Features Power dissipation (at 25 °C): 1 W Maximum collector current (pulse): 1.5 A..

1.0

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